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Chapter 11 Modeling the Stochastic Gating of Ion Channels
Gregory D. Smith

11.1 Single-Channel Gating and a Two-State Model
11.1.1 Modeling Channel Gating as a Markov Process
11.1.2 The Transition Probability Matrix
11.1.3 Dwell Times
11.1.4 Monte Carlo Simulation
11.1.5 Simulating Multiple Independent Channels
11.1.6 Gillespie's Method
11.2 An Ensemble of Two-State Ion Channels
11.2.1 Probability of Finding N Channels in the Open State
11.2.2 The Average Number of Open Channels
11.2.3 The Variance of the Number of Open Channels
11.3 Fluctuations in Macroscopic Currents
11.4 Modeling Fluctuations in Macroscopic Currents with Stochastic ODEs
11.4.1 Langevin Equation for and Ensemble of Two-State Channels
11.4.2 Fokker-Planck Equation for an Ensemble of Two-State Channels
11.5 Membrane Voltage Fluctuations
11.5.1 Membrane Voltage Fluctuations with an Ensemble of Two-State Channels
11.6 Stochasticity and Discreteness in and Excitable Membrane Model
11.6.1 Phenomena Induced by Stochasticity and Discreteness
11.6.2 The Ensemble Density Approach Applied to the Stochastic Morris-Lecar Model
11.6.3 Langevin Formulation for the Stochastic Morris-Lecar Model
11.7 Exercises
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